Engineering the electron transport of silicon-based molecular electronic devices via molecular dipoles

Journal of Physical Chemistry C

Volumn 114, Issue 49, 2010, Pages 21708-21714

  Gergel Hackett, Nadine ^a,b   Aguilar, Izath ^a   Richter, Curt A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b MARY BALDWIN COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CHARGE TRANSPORT; CMOS COMPATIBLE; DOPING LEVELS; ELECTRICAL TRANSPORT; ELECTRON TRANSPORT; JUNCTION INTERFACES; LOCAL ELECTRIC FIELD; MOLECULAR DIPOLE; MOLECULAR ELECTRONIC DEVICE; MOLECULAR MONOLAYER; SCHOTTKY BARRIERS; SILICON SUBSTRATES; SILICON-BASED; TUNNELING REGIME;

ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; MOLECULAR ELECTRONICS; MONOLAYERS; SCHOTTKY BARRIER DIODES; THERMOELECTRIC EQUIPMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650257241     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp106009k     Document Type: Article

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