Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 173-176

  Andersson, Caroline ^a   Sousa, Marilyne ^a   Marchiori, Chiara ^a   Webb, David J ^a   Caimi, Daniele ^a   Siegwart, Heinz ^a   Fompeyrine, Jean ^a   Rossel, Christophe ^a   Dimoulas, Athanasios ^b   Panayiotatos, Yerassimos ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

FORMING GAS; GATE STACKS; METALLIZATIONS; MOSFETS; P-MOSFETS; SCALED DEVICES;

CAPACITANCE; CAPACITORS; GERMANIUM; HAFNIUM COMPOUNDS; MOSFET DEVICES; OXYGEN; PASSIVATION;

MOS CAPACITORS;

EID: 72849150710     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331468     Document Type: Conference Paper

References (12)

1. J. Mitard et aI., "Record lon/loff performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability" Electron Devices Meeting, IEDM 2008.
2. D. Kuzum et aI., " Interface-engineered Ge (100) and (111), n- and pFETs with high mobility", Electron Devices Meeting, IEDM 2007.
3. A. Delabie et aI., "Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide", Appl. Phys. Lett. 91 (2007) 082904 .
4. A. Dimoulas et aI., "Germanium FETs and capacitors with rare earth CeO2/HfO2 gates", Solid-State Electronics 51 (2007) 1508-1514.
5. G. Mavrou et aI., "Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices", 1. Appl. Phys. 103 (2008) 014506
6. G. Mavrou et aI., "Very high-k ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates", Appl. Phys. Lett. 93 (2008) 212904.
7. J. Song et aI., "Improvement of interfacial properties with interfacial layer in La2O3/Ge structure", Microelec. Engineering 84 (2007) 2336-2339.
8. C. Andersson et aI., "Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices", Microelec. Engineering, in press.
9. C. Rossel et aI., "Ge p-channel MOSFETs with La2O3 and AI2O3 gate dielectrics", Proc. 38th European Solid-State Device Research Conf. (2008), 70-82.
10. G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J.C. Hooker, and T. Conard, "Complex admittance analysis for La2Hf2O7/SiO2 high-k dielectric stacks", Appl. Phys. Lett. 84 (2004) 260-262.
11. D. Bozyigit, and C. Rossel, "On the extraction of interface trap density in the Pt/La2O3/Ge gate stack and the determination of the charge neutrality level in Ge", to be published.
12. S.F. Galata et aI., "Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetall ization anneal", J. Vac. Sci. Technol. B 27 (1) lan/Feb 2009.