Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: A first-principle study

Chinese Physics B

Volumn 19, Issue 11, 2010, Pages

  Li, Ping ^a   Deng, Sheng Hua ^b   Zhang, Li ^a   Yu, Jiang Ying ^a   Liu, Guo Hong ^a  

^a ANHUI JIANZHU UNIVERSITY   (China)

^b BEIHANG UNIVERSITY   (China)

Author keywords

Conductivity; Doping; First principles; ZnO

Indexed keywords

CO-DOPED; CO-DOPED ZNO; CO-DOPING; CONDUCTIVITY; DOPING; EFFECTIVE MASS; FIRST-PRINCIPLE STUDY; FIRST-PRINCIPLES; HOLE EFFECTIVE MASS; IMPURITY STATE; P-TYPE CONDUCTIVITY; ZNO;

ALUMINUM; ELECTRONIC STRUCTURE; GALLIUM; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 78650002544     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/11/117102     Document Type: Article

References (42)

1. Klingshirn C 2007 Chem. Phys. Chem. 8 782
2. Tang Z K, Wong G K, Kawasaki P, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1998 Appl. Phys. Lett. 72 3270
3. Xu W Z, Ye Z Z, Zhou T, Zhao B H, Zhu L P and Huang J Y 2004 J. Cryst. Growth 265 133
4. Kang H S, Ahn B D, Kim J H, Kim G H, Lim S H, Chang H W and Lee S Y 2006 Appl. Phys. Lett. 88 202108
5. Du G, Ma Y, Zhang Y and Yang T 2005 Appl. Phys. Lett. 87 213103
6. Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Cantwell G 2002 Appl. Phys. Lett. 81 1830
7. Rommeluere J F, Svob L, Jomard F, Mimila-Arroyo J, Lusson A, Sallet V and Marfaing Y 2003 Appl. Phys. Lett. 83 287
8. Xu W Z, Ye Z Z, Zeng Y J, Zhu L P, Zhao B H, Jiang L, Lu J G, He H P and Zhang S B 2006 Appl. Phys. Lett. 88 173506
9. Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S, Fuke S, Segawa Y, Ohno H, Koinuma H and Kawasaki M 2005 Nat. Mater. 4 42
10. Yu Zh G, Wu P and Gong H 2006 Appl. Phys. Lett. 88 132114
11. Xiu F X, Yang Z, Mandalapu L J, Liu J L and Beyermann W P 2006 Appl. Phys. Lett. 88 052106
12. Vaithianathan V, Lee B T and Kima S S 2006 J. Appl. Phys. 98 043519
13. Vaithianathan V, Lee B T, Chang Ch H, Asokan K and Kim S S 2006 Appl. Phys. Lett. 88 112103
14. Vaithianathan V, Lee B T and Kim S S 2005 Appl. Phys. Lett. 86 062101
15. Mandalapu L J, Yang Z, Xiu F X, Zhao D T and Liu J L 2006 Appl. Phys. Lett. 88 092103
16. Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liua J L and Beyermann W P 2005 Appl. Phys. Lett. 87 152101
17. Yuan G D, Ye Z Z, Zhu L P, Qian Q, Zhao B H and Fan R X 2005 Appl. Phys. Lett. 86 202106
18. Bian J M, Li X M, Zhang C Y and Chen L D 2004 Appl. Phys. Lett. 84 3783
19. Dai L P, Deng H, Chen J J and Wei M 2007 Solid State Commun. 143 378
20. Zhu Q Y, Ye Z Z, Yuan G D, Huang J Y, Zhu L P, Zhao B H and Lu J G 2006 Appl. Surf. Sci. 253 1903
21. Kumar M, Kim T H, Kim S S and Lee B T 2006 Appl. Phys. Lett. 89 112103
22. Chen L L, Lu J G, Ye Z Z, Lin Y M, Zhao B H, Ye Y M, Li J S and Zhu L P 2005 Appl. Phys. Lett. 87 252106
23. Cao Y, Miao L, Tanemura S, Tanemura M, Kuno Y and Hayashi Y 2006 Appl. Phys. Lett. 88 251116
24. Huang G Y, Wang Ch Y and Wang J T 2009 Scripta Materialia 61 324
25. Shen Y Q, Mi L, Xu X F, Wu J D, Wang P N, Ying Zh F and Xu N 2008 Solid State Commun. 148 301
26. Duan X Y, Zhao Y J and Yao R H 2008 Solid State Commun. 147 194
27. Zuo C Y, Wen J and Bai Y L 2010 Chin. Phys. B 19 047101
28. Liu X C, Lu ZH and Zhang F M 2010 Chin. Phys. B 19 027502
29. Huang G Y, Wang C Y and Wang J T 2010 Chin. Phys. B 19 013101
30. Vispute R D, Talyansky V, Choopun S, Sharma P P, Venkatesan T, He M, Tang X, Halpern J B, Spencer M G, Li Y X and Salamanca-Riba L G 1998 Appl. Phys. Lett. 73 348
31. Kress G and Furthmuller J 1996 Phys. Rev. B 54 11169
32. Hamarm D R, Schhter M and Chiang C 1979 Phys. Rev. Lett. 43 1494
33. Perdew J P, Chevary J A, Vosko S H, Jackson K A, Perderson M R and Singh D J 1992 Phys. Rev. B 46 6671
34. Schleife A, Fuchs F, Furthmuller J and Bechstedt F 2006 Phys. Rev. B 73 245212
35. Wardle M G, Goss J P and Briddon P R 2006 Phys. Rev. Lett. 96 205504
36. Imai Y, Watanabe A and Shimono I 2003 J. Mater. Sci.-Mater. Electron. 14 149
37. Oshikiri M, Aryasetiawan F, Imanaka Y and Kido G 2002 Phys. Rev. B 66 125204
38. Oshikiri M, Imanaka Y, Aryasetiawan F and Kido G 2001 Physica B 298 472
39. Zhou C and Kang J 2004 3th International Conference on Semiconducting and Insulating Materials SIMC-XIII- 2004, Beijing, September, pp81-84
40. Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2004 J. Vac. Sci. Technol. B 22 932
41. Wang L and Giles N C 2004 Appl. Phys. Lett. 84 3049
42. Thonke K, Gruber Th, Teofilov N, Schönfelder R, Waag A and Sauer R 2001 Physica B 308-310 945