Comparison of electronic structures of doped ZnS and ZnO calculated by a first-principle pseudopotential method

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 3, 2003, Pages 149-156

  Imai, Yoji ^a   Watanabe, Akio ^a   Shimono, Isao ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b HOKKAIDO INDUSTRIAL TECHNOLOGY CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FERMI LEVEL; LIGHT EMITTING DIODES; PROBABILITY DENSITY FUNCTION; ZINC SULFIDE;

ELECTRONIC BAND CALCULATIONS;

ELECTRONIC STRUCTURE;

EID: 0037355754     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022301907161     Document Type: Article

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