Pushing p-type conductivity in ZnO by (Zr, N) codoping: A first-principles study

Solid State Communications

Volumn 147, Issue 5-6, 2008, Pages 194-197

  Duan, Xin Ying ^a   Zhao, Yu Jun ^a   Yao, Ruo He ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

A. Semiconductors; C. Impurities in semiconductors; D. Electronic band structure

Indexed keywords

ALUMINUM; COBALT; COBALT ALLOYS; COBALT COMPOUNDS; DOPING (ADDITIVES); GALLIUM; LITHIUM; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SOLID STATE PHYSICS; ZINC; ZINC ALLOYS; ZINC OXIDE; ZIRCONIUM;

(MO Y) DOPING; CO-DOPED ZNO; CO-DOPING; ELSEVIER (CO); FIRST PRINCIPLES STUDIES; FIRST-PRINCIPLES CALCULATIONS; GROWTH CONDITIONS; IMPURITY BANDS; IONIZATION ENERGY (I.E.); NEW APPROACHES; P TYPE CONDUCTIVITIES; VALENCE BAND MAXIMUM (VBM);

ZIRCONIUM COMPOUNDS;

EID: 46049101973     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.05.027     Document Type: Article

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