Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

Chinese Physics B

Volumn 19, Issue 2, 2010, Pages

  Liu, Xing Chong ^a   Lu, Zhi Hai ^b   Zhang, Feng Ming ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

Magnetic semiconductor; Photoluminescence; ZnO

Indexed keywords

ANNEALING ATMOSPHERES; MN-DOPED ZNO; OXYGEN AMBIENT; RADIO FREQUENCY SPUTTERING; ROOM TEMPERATURE; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; ZNO;

DEFECTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE COMPOUNDS; METAL ANALYSIS; OXYGEN; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SATURATION MAGNETIZATION; ZINC; ZINC OXIDE;

FERROMAGNETISM;

EID: 77649246586     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/2/027502     Document Type: Article

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