Advanced multilayer amorphous ailicon thin-film transistor structure: Film thickness effect on its electrical performance and contact resistance

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3362-3367

  Kuo, Alex ^a   Won, Tae Kyung ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Applied Komatsu Technology   (United States)

Author keywords

Amorphous silicon thin film transistor; Contact resistance; Dual layer; Thickness effect

Indexed keywords

CONTACT RESISTANCE; ELECTRIC PROPERTIES; FATIGUE CRACK PROPAGATION; MAGNETIC FILMS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MULTILAYERS; NITRIDES; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; SILICON NITRIDE; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

AMORPHOUS; AMORPHOUS SILICON NITRIDES; DUAL LAYER; ELECTRICAL CHARACTERISTICS; ELECTRICAL PERFORMANCES; ELECTRICAL PROPERTIES; H FILMS; HIGH ELECTRONIC QUALITIES; RESISTANCE INCREASES; SUBTHRESHOLD SWING; THICKNESS EFFECT; THICKNESS EFFECTS;

AMORPHOUS SILICON;

EID: 46649096966     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3362     Document Type: Article

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