Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4892-4896

  Kim, Gwan Ha ^a   Kang, Young Rog ^a   Kim, Whan Jun ^a   Kim, Sang Yong ^b   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

^b DongbuAnam Semiconductor Inc   (South Korea)

Author keywords

Gate induced drain leakage current; Plasma charging damage; Threshold voltage shift

Indexed keywords

DRY ETCHING; GATES (TRANSISTOR); LEAKAGE CURRENTS; PLASMA ETCHING; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

GATE INDUCED DRAIN LEAKAGE CURRENT; JUNCTION LEAKAGE; PLASMA CHARGING DAMAGE; THRESHOLD VOLTAGE SHIFT;

MOSFET DEVICES;

EID: 33947187213     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.086     Document Type: Article

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