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Volumn 97, Issue 18, 2010, Pages

Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes

(4) Lin, Ray Ming a Lai, Mu Jen a Chang, Liann Be a Huang, Chou Hsiung a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; DOUBLE HETEROSTRUCTURES; GAN LAYERS; INJECTION LEVELS;

GALLIUM NITRIDE; LIGHT EMITTING DIODES;

LIGHT EMISSION;

EID: 78649294468 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3513394 Document Type: Article

Times cited : (11)

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