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Volumn 96, Issue 13, 2010, Pages

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(9) Bochkareva, N I a Voronenkov, V V b Gorbunov, R I a Zubrilov, A S a Lelikov, Y S a Latyshev, P E c Rebane, Y T a Tsyuk, A I b Shreter, Y G a

a IOFFE INSTITUTE (Russian Federation)

b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation)

c ST PETERSBURG STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP DEFECTS; DEFECT STATE; EMISSION SPECTRUMS; EXTERNAL QUANTUM EFFICIENCY; FORWARD VOLTAGE; GAN-BASED LIGHT-EMITTING DIODES; III-NITRIDE; INJECTION EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; LOW ENERGIES; QUANTUM WELL; TUNNELING CURRENT; TUNNELING LEAKAGE; TUNNELING MECHANISM;

DEFECTS; ELECTRON TUNNELING; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTOR QUANTUM DOTS; TUNNELING (EXCAVATION); WIND TUNNELS;

QUANTUM EFFICIENCY;

EID: 77950490121 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3367897 Document Type: Article

Times cited : (87)

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