Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2148-2150

  Maier, Markus ^a   Passow, Thorsten ^a   Kunzer, Michael ^a   Pletschen, Wilfried ^a   Köhler, Klaus ^a   Wagner, Joachim ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Electroluminescence; GaInN; LEDs; Lifetime; MOCVD; Recombination

Indexed keywords

GAINN; LEDS; LIFETIME; MOCVD; RECOMBINATION;

CARRIER CONCENTRATION; CARRIER LIFETIME; DEFECTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMITTING DIODES;

DEFECT DENSITY;

EID: 77955778569     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983473     Document Type: Conference Paper

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