Phase change memory based on (Sb2Te3) 0:85-(HfO2)0:15 composite film

Applied Physics Express

Volumn 3, Issue 11, 2010, Pages

  Lu, Yegang ^a,b   Song, Sannian ^b   Song, Zhitang ^b   Yao, Dongning ^b   Xi, Wei ^b   Yin, Weijun ^b   Zheng, Hao ^b   Feng, Songlin ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION TEMPERATURE; DISSIPATED ENERGY; ORDER OF MAGNITUDE; ORDERS OF MAGNITUDE; PHASE CHANGE; RESISTANCE MEASUREMENT; RESISTANCE RATIO;

COMPOSITE FILMS; DIFFRACTION; GERMANIUM; HAFNIUM COMPOUNDS; TELLURIUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHASE CHANGE MEMORY;

EID: 78549276133     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.111201     Document Type: Article

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