Performance improvement of phase-change memory cell with Ge 2Sb2Te5-HfO2 composite films

Applied Physics A: Materials Science and Processing

Volumn 99, Issue 4, 2010, Pages 767-770

  Song, Sannian ^a   Song, Zhitang ^a   Liu, Bo ^a   Wu, Liangcai ^a   Feng, Songlin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; COSPUTTERING; PERFORMANCE IMPROVEMENTS; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY; RESET VOLTAGE; ROOM TEMPERATURE; UNIFORM SIZE;

GERMANIUM; HAFNIUM COMPOUNDS; PHASE CHANGE MEMORY; PHASE SEPARATION; RANDOM ACCESS STORAGE; TELLURIUM COMPOUNDS;

COMPOSITE FILMS;

EID: 77955685387     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-010-5708-y     Document Type: Article

References (20)

1. S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968)
2. M. Wuttig, N. Yamada, Nature Mater. 6, 824 (2007)
3. A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga, Nature Mater. 3, 703 (2004)
4. S. Lai, T. Lowrey, Tech. Dig.-Int. Electron Devices Meet. 2001, 243 (2001)
5. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, M. Takao, J. Appl. Phys. 69, 2849 (1991)
6. V. Weidenhof, I. Friedrich, S. Ziegler, M. Wuttig, J. Appl. Phys. 86, 5879 (1999)
7. J.H. Kim, J. Appl. Phys. 86, 6770 (1999)
8. L.C. Wu, Z.T. Song, F. Rao, Y.F. Gong, B. Liu, L.Y. Wang, W.L. Liu, S.L. Feng, Appl. Phys. Lett. 93, 103107 (2008)
9. Y.K. Kim, K. Jeong, M.H. Cho, U. Hwang, H.S. Jeong, K.N. Kim, Appl. Phys. Lett. 90, 171920 (2007)
10. N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Matsuoka, M. Moniwa, Tech. Dig.-Int. Electron Devices Meet. 2005, 738 (2005)
11. Y. Ling, Y.Y. Lin, B.W. Qiao, Y.F. Lai, J. Feng, T.A. Tang, B.C. Cai, B. Chen, Jpn. J. Appl. Phys. 45(12), 349 (2006)
12. S.W. Ryu, J.H. Oh, B.J. Choi, S.-Y. Hwang, S.K. Hong, C.S. Hwang, H.J. Kim, Electrochem. Solid-State Lett. 9, G259 (2006)
13. J. Noh, D. Suh, S. Lee, K. Kim, W. Shin, E. Lee, Y. Kang, J. Park, K. Kim, Y. Khang, Mater. Res. Soc. Symp. Proc. 888, V05-09 (2006)
14. K.H. Song, S.W. Kim, J.H. Seo, H.Y. Lee, J. Appl. Phys. 104, 103516 (2008)
15. S.W. Ryu, J.H. Oh, J.H. Lee, B.J. Choi, W. Kim, S.K. Hong, C.S. Hwang, H.J. Kim, Appl. Phys. Lett. 92, 142110 (2008)
16. A.L. Greer, Nature (London) 336, 303 (1993)
17. T.Y. Lee, S.S. Yim, D.B. Lee, M.H. Lee, D.H. Ahn, K.B. Kim, Appl. Phys. Lett. 89, 163503 (2006)
18. J. Feng, Z.F. Zhang, Y. Zhang, B.C. Cai, Y.Y. Lin, T.A. Tang, B. Chen, J. Appl. Phys. 101, 074502 (2007)
19. W.K. Njoroge, H.W. Woltgens, M. Wuttig, J. Vac. Sci. Technol. A 20, 230 (2002)
20. D. Lee, S.S. Yim, H.K. Lyeo, M.H. Kwon, D. Kang, H.G. Jun, S.W. Nam, K.B. Kim, Electrochem. Solid-State Lett. 13(2), K8 (2010)