Submicron nonvolatile memory cell based on reversible phase transition in chalcogenide glasses

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6157-6161

  Nakayama, Kazuya ^a   Kojima, Kazuhiko ^a   Hayakawa, Fumihito ^a   Imai, Yutaka ^a   Kitagawa, Akio ^a   Suzuki, Masakuni ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BINARY CODES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ION BEAMS; NONVOLATILE STORAGE; PHASE TRANSITIONS; RANDOM ACCESS STORAGE;

CHALCOGENIDE GLASSES; NONVOLATILE MEMORY CELLS;

SEMICONDUCTING GLASS;

EID: 0034314818     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6157     Document Type: Article

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