Phase change behavior in oxygen-incorporated Ge2Sb 2Te5 films

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Jang, M H ^a   Park, S J ^a   Lim, D H ^a   Cho, M H ^a   Do, K H ^a   Ko, D H ^a   Sohn, H C ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; EXTENDED X-RAY ABSORPTION FINE STRUCTURE DATUM; FACE-CENTERED CUBIC PHASE; HEXAGONAL STRUCTURES; ION BEAM SPUTTERING DEPOSITION; OXYGEN CONTENT; PHASE CHANGE; STRUCTURAL STABILITIES;

DIFFRACTION; ELECTRIC RESISTANCE; GERMANIUM; HOLOGRAPHIC INTERFEROMETRY; OXYGEN; PHASE MODULATION; SPUTTERING; STABILITY; SYSTEM THEORY; TELLURIUM COMPOUNDS;

PHASE SEPARATION;

EID: 67650507838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3168551     Document Type: Article

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