Effects of substrate temperature on the device properties of pentacene-based thin film transistors using Al2O3+x gate dielectric

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3733-3736

  Lee, Jiyoul ^a   Kim, J H ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; ELLIPSOMETRY; FILM GROWTH; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; HOLE MOBILITY; HOLE TRAPS; MAGNETRON SPUTTERING; PERMITTIVITY; PHASE TRANSITIONS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

ORGANIC THIN FILM TRANSISTORS (OTFT); SPECTROELLIPSOMETRY (SE);

THIN FILM TRANSISTORS;

EID: 1942510599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650886     Document Type: Article

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