High capacitance organic field-effect transistors with modified gate insulator surface

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5781-5787

  Majewski, L A ^a   Schroeder, R ^a   Grell, M ^a   Glarvey, P A ^a   Turner, M L ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CAPACITANCE; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTROCHEMISTRY; ORGANIC POLYMERS; OXIDATION; SELF ASSEMBLY; SEMICONDUCTING FILMS; SEMICONDUCTING ORGANIC COMPOUNDS;

ELECTROCHEMICAL OXIDATION; OXYGEN DOPING; SILANIZATION;

FIELD EFFECT TRANSISTORS;

EID: 9944257102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1798401     Document Type: Article

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