SCOPUS 정보 검색 플랫폼

Volumn 133, Issue 16, 2010, Pages

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2 O on InAs and In0.53Ga0.47As (001)-(4×2) surfaces

(8) Shen, Jian a Chagarov, Evgueni A a Feldwinn, Darby L a Melitz, Wilhelm a Santagata, Nancy M a Kummel, Andrew C a Droopad, Ravi b Passlack, Matthias c

a UNIVERSITY OF CALIFORNIA (United States)

b TEXAS STATE UNIVERSITY (United States)

c TSMC Europe BV (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BONDING ENVIRONMENT; BULK-LIKE; CONDUCTION-BAND MINIMUM; DENSITY FUNCTION THEORY; INAS; INTERFACIAL BONDING; OXYGEN ATOM; P-TYPE; POST DEPOSITION ANNEALING; POST-DEPOSITION; ROOM TEMPERATURE DEPOSITION; STM IMAGES; STM/STS; SURFACE ATOMS; SURFACE STATE; TUNNELING SPECTROSCOPY; VALENCE-BAND MAXIMUMS;

ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; GALLIUM; HETEROJUNCTIONS; INDIUM ARSENIDE; MONOLAYERS; OXYGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SPECTROSCOPY;

ATOMS;

EID: 78149398797 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.3497040 Document Type: Article

Times cited : (14)

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