Direct and indirect causes of Fermi level pinning at the SiOGaAs interface

Journal of Chemical Physics

Volumn 126, Issue 8, 2007, Pages

  Winn, Darby L ^a   Hale, Michael J ^a   Grassman, Tyler J ^a   Kummel, Andrew C ^a   Droopad, Ravi ^b   Passlack, Matthias ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SILICON;

FERMI LEVEL MIDGAP; LOCAL CHARGE; STM IMAGES;

FERMI LEVEL;

EID: 33847653218     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363183     Document Type: Article

References (54)

1. G. Eftekhari, Thin Solid Films 257, 110 (1995).
2. J. L. Freeouf, D. A. Bachanan, S. L. Wright, T. N. Jackson, and B. Robinson, Appl. Phys. Lett. 57, 1919 (1990).
3. C. J. Huang, Z. S. Ya, J. H. Horng, M. P. Houng, and Y. H. Wang, Jpn. J. Appl. Phys., Part 1 41, 5561 (2002).
4. D. Sengupta and V. Kumar, Phys. Status Solidi A 73, K279 (1982).
5. H. Becke, R. Hall, and J. White, Solid-State Electron. 8, 813 (1965).
6. A. Colquhoun, E. Kohn, and H. L. Hartnagel, IEEE Trans. Electron Devices 25, 375 (1978).
7. N. Yokoyama, T. Mimura, and M. Fukuta, IEEE Trans. Electron Devices 27, 1124 (1980).
8. E. Kohn and A. Colquhoun, Electron. Lett. 13, 73 (1977).
9. R. K. Ahrenkiel and D. J. Dunlavy, Solid-State Electron. 27, 485 (1984).
10. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14, 2297 (1996).
11. M. Passlack, M. Hong, J. P. Mannaerts, J. R. Kwo, and L. W. Tu, Appl. Phys. Lett. 68, 3605 (1996).
12. T. T. Chiang and W. E. Spicer, J. Vac. Sci. Technol. A 7, 724 (1989).
13. J. L. Freeouf and J. M. Woodall, Appl. Phys. Lett. 39, 727 (1981).
14. E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, and T. Wosinski, J. Appl. Phys. 53, 6140 (1982).
15. R. E. Allen and J. D. Dow, J. Vac. Sci. Technol. 19, 383 (1981).
16. W. E. Spicer, Z. Lilientalweber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. Mccants, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 6, 1245 (1988).
17. M. J. Hale, J. Z. Sexton, D. L. Winn, A. C. Kummel, M. Erbudak, and M. Passlack, J. Chem. Phys. 120, 5745 (2004).
18. M. J. Hale, S. I. Yi, J. Z. Sexton, A. C. Kummel, and M. Passlack, J. Chem. Phys. 119, 6719 (2003).
19. N. Negoro, H. Fujikura, and H. Hasegawa, Appl. Surf. Sci. 159, 292 (2000).
20. R. C. Blanchet and B. J. Delhomme, Vacuum 32, 3 (1982).
21. J. G. Tenedorio and P. A. Terzian, IEEE Electron Device Lett. 5, 199 (1984).
22. A. Paccagnella, E. Zanoni, C. Tedesco, C. Lanzieri, and A. Cetronio, IEEE Trans. Electron Devices 38, 2682 (1991).
23. G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Marmatz, H. Shen, and W. L. Warren, Colloids Surf., A 72, 161 (1993).
24. See EPAPS Document No. E-JCPSA6-126-707641 for decapping procedure example. This document can be reached via a direct link in the online article's HTML reference section or via the EPAPS homepage (http://www.aip.org/pubservs/ epaps.html).
25. P. Martensson and R. M. Feenstra, Phys. Rev. B 39, 7744 (1989).
26. R. M. Feenstra, Phys. Rev. B 50, 4561 (1994).
27. R. M. Feenstra and J. A. Stroscio, J. Vac. Sci. Technol. B 5, 923 (1987).
28. J. Behrend, M. Wassermeier, L. Daweritz, and K. H. Ploog, Surf. Sci. 342, 63 (1995).
29. Q. K. Xue, T. Hashizume, and T. Sakurai, Appl. Surf. Sci. 141, 244 (1999).
30. J. E. Northrup and S. Froyen, Phys. Rev. B 50, 2015 (1994).
31. W. G. Schmidt and F. Bechstedt, Phys. Rev. B 54, 16742 (1996).
32. T. Hashizume, Q. K. Xue, J. Zhou, A. Ichimiya, and T. Sakurai, Phys. Rev. Lett. 73, 2208 (1994).
33. I. Chizhov, G. Lee, R. F. Willis, D. Lubyshev, and D. L. Miller, Surf. Sci. 419, 1 (1998).
34. N. Moll, A. Kley, E. Pehlke, and M. Scheffler, Phys. Rev. B 54, 8844 (1996).
35. V. P. LaBella, H. Yang, D. W. Bullock, P. M. Thibado, P. Kratzer, and M. Scheffler, Phys. Rev. Lett. 83, 2989 (1999).
36. J. A. Stroscio, R. M. Feenstra, and A. P. Fein, Phys. Rev. B 36, 7718 (1987).
37. J. A. Stroscio and R. M. Feenstra, J. Vac. Sci. Technol. A 6, 577 (1988).
38. M. D. Pashley, Phys. Rev. B 40, 10481 (1989).
39. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996).
40. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996).
41. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).
42. G. Kresse, Technische University at Wien, 1993.
43. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
44. P. E. Blochl, Phys. Rev. B 50, 17953 (1994).
45. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999).
46. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976).
47. J. Paier, R. Hirschl, M. Marsman, and G. Kresse, J. Chem. Phys. 122, 234102 (2005).
48. N. Lorente, M. F. G. Hedouin, R. E. Palmer, and M. Persson, Phys. Rev. B 68, 155401 (2003).
49. K. Seino, W. G. Schmidt, M. Preuss, and F. Bechstedt, J. Phys. Chem. B 107, 5031 (2003).
50. G. Henkelman, A. Arnaldsson, and H. Jonsson, Comput. Mater. Sci. 36, 354 (2006).
51. G. X. Qian, R. M. Martin, and D. J. Chadi, Phys. Rev. B 38, 7649 (1988).
52. C. G. Van de Walle and J. Neugebauer, Phys. Rev. Lett. 88, 066103 (2002).
53. J. Tersoff and D. R. Hamann, Phys. Rev. B 31, 805 (1985).
54. Handbook of Chemistry and Physics, 85 ed. (CRC Press, Boca Raton, 2004).