Surface reconstructions of InGaAs alloys

Surface Science

Volumn 550, Issue 1-3, 2004, Pages 1-7

  Millunchick, J Mirecki ^a   Riposan, A ^a   Dall, B J ^a   Pearson, Chris ^b   Orr, B G ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b UNIVERSITY OF MICHIGAN FLINT   (United States)

Author keywords

Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Scanning tunneling microscopy; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; COMPRESSIBILITY OF SOLIDS; DATA REDUCTION; DESORPTION; FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; STRESS ANALYSIS; SURFACE STRUCTURE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ARSENIDE; INDIUM ARSENIDE; SURFACE RELAXATION AND RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0942267863     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.01.003     Document Type: Article

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