Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2400-2403

  Chu, R M ^a   Zhou, Y G ^a   Chen, K J ^a   Lau, K M ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; ENERGY DISTRIBUTIONS; EQUIVALENT CIRCUIT MODEL; FREQUENCY RANGES; INTERFACE TRAP STATE; SPATIAL LOCATION; SYSTEMATIC STUDY; TRAP STATE DENSITY;

GALLIUM NITRIDE;

INTERFACE STATES;

EID: 59349088759     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303344     Document Type: Conference Paper

References (7)

1. K. Kasahara, H. Miyamoto, Y. Ando, Y. Okamoto, T. Nakayama, and M. Kuzuhara, IEEE Int. Electron Device Meeting Dig. 677 (2002).
2. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. A. Khan, and I. Adesida, IEEE Electron Device Lett. 23, 455 (2002).
3. S. C. Binari, K. Ilossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, IEEE Trans. Electron Devices 48, 465 (2001).
4. E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, J. Appl. Phys. 87, 8070 (2000).
5. E. H. Nicollian and A. Goetzberger, Bell. Syst. Tech. J. 46, 1055 (1967).
6. H. Rohdin, N. Moll, A. M. Bratkovsky, and C. Y. Su, Phys. Rev. B 59, 13102 (1999).
7. A. Hierro, S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 77, 1499 (2000).