In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy

Electronics Letters

Volumn 43, Issue 14, 2007, Pages 779-780

  Heying, B ^a   Smorchkova, I P ^a   Coffie, R ^a   Gambin, V ^a   Chen, Y C ^a   Sutton, W ^a   Lam, T ^a   Kahr, M S ^a   Sikorski, K S ^a   Wojtowicz, M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

GATE METALLISATION; PASSIVATION LAYERS; WAFER FABRICATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547616282     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071211     Document Type: Article

References (13)

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