Suitability study of oxide/gallium arsenide interfaces for MOSFET applications

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2944-2956

  Passlack, Matthias ^a   Droopad, Ravi ^b   Brammertz, Guy ^c  

^a TSMC Europe BV   (Belgium)

^b TEXAS STATE UNIVERSITY   (United States)

^c IMEC   (Belgium)

Author keywords

Ga2O3; GaAs MOSFET; high k dielectric; IIIV MOSFET; IIIV semiconductor; oxide semiconductor interface

Indexed keywords

GA2O3; GAAS MOSFET; HIGH-K DIELECTRIC; II-IV SEMICONDUCTORS; III-V MOSFET; OXIDE/SEMICONDUCTOR INTERFACES;

DC POWER TRANSMISSION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOSFET DEVICES;

SEMICONDUCTING GALLIUM;

EID: 78049282838     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2065950     Document Type: Article

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