Gallium oxide and gadolinium gallium oxide insulators on Si δ -doped GaAs/AlGaAs heterostructures

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Paterson, G W ^a   Longo, P ^a   Wilson, J A ^a   Craven, A J ^a   Long, A R ^a   Thayne, I G ^a   Passlack, M ^b,c   Droopad, R ^b,d  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Texas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR CENTERS; DIELECTRIC MATERIALS; ENERGY GAP; GADOLINIUM; GALLIUM ALLOYS; GATES (TRANSISTOR); MOS CAPACITORS; OZONE WATER TREATMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAPS; CAPACITANCE VOLTAGES; DEFECT STATES; DEVICE APPLICATIONS; DIELECTRIC STACKS; DOPING LAYERS; DX CENTERS; FORWARD BIASES; GAAS/ALGAAS; GADOLINIUM GALLIUM OXIDES; GALLIUM OXIDES; GATE INSULATORS; GATE LEAKAGES; GATE VOLTAGES; HETEROSTRUCTURES; HIGHER TEMPERATURES; INTERFACE REGIONS; TEMPERATURE DEPENDENTS; TEST DEVICES; TRANSMISSION ELECTRON MICROSCOPES; TRANSPORT CHANNELS;

GATE DIELECTRICS;

EID: 57049184099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3029661     Document Type: Article

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