A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Giussani, A ^a   Zaumseil, P ^a   Seifarth, O ^a   Storck, P ^b   Schroeder, T ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIXBYITE STRUCTURE; EPITAXIAL OVERGROWTH; FIGURE OF MERIT; FUNCTIONAL OXIDES; HETEROSTRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; LATTICE-MATCHED; MIXED OXIDE; MULTIFERROICS; NOVEL DEVICES; OXIDE BUFFER; POWDER MATERIAL; SI (1 1 1); SI FILMS; SI(111) SUBSTRATE; SILICON ON INSULATOR; SINGLE-CRYSTALLINE; STRAIN-FREE; STRUCTURAL DEFECT; SUPPORT SYSTEMS; THERMAL EXPANSION COEFFICIENTS; WILLIAMSON-HALL;

CRYSTALS; EPITAXIAL GROWTH; HETEROJUNCTIONS; OXIDE FILMS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; THERMAL EXPANSION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958608380     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/9/093005     Document Type: Article

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