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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2524-2528

Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1-xSbx type-II quantum dots

(7) Hsu, Wei Ting a Liao, Yu An a Lu, Shu Kai a Cheng, Shun Jen a Chiu, Pei Chin b Chyi, Jen Inn b Chang, Wen Hao a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

Quantum dots; Time resolved photoluminescence; Type II

Indexed keywords

BAND ALIGNMENTS; BLUESHIFTS; EMISSION PROPERTIES; EXCITATION POWER; GAAS; INAS QUANTUM DOTS; INAS/GAAS; LOCALIZED STATE; POSTGROWTH THERMAL ANNEALING; QD EMISSIONS; QUANTUM DOT; RADIATIVE RECOMBINATION RATE; RECOMBINATION DYNAMICS; THERMAL-ANNEALING; TIME-RESOLVED PHOTOLUMINESCENCE; TIME-RESOLVED PL MEASUREMENT; TYPE-II;

ANNEALING; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958020915 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2009.12.033 Document Type: Conference Paper

Times cited : (4)

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