Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer

Applied Physics Letters

Volumn 91, Issue 15, 2007, Pages

  Chiu, Pei Chin ^a   Liu, Wei Sheng ^a   Shiau, Meng Jie ^a   Chyi, Jen Inn ^a,b   Chen, Wen Yen ^a   Chang, Hsing Szu ^a   Hsu, Tzu Min ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LINEWIDTH; PHOTOLUMINESCENCE; RADIATION EFFECTS; SURFACE ACTIVE AGENTS;

MATERIAL QUALITY; NARROW LINEWIDTH; OVERGROWN LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 35248900911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2798601     Document Type: Article

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