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Volumn 89, Issue 8, 2006, Pages

1.55 μm emission from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation

(4) Guimard, Denis a Tsukamoto, Shiro a Nishioka, Masao a Arakawa, Yasuhiko a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ELECTRON EMISSION; GROUND STATE; IRRADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EMISSION WAVELENGTH; GROUND-STATE EMISSION; REDSHIFT; STRAIN-REDUCING LAYER (SRL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747866303 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2337163 Document Type: Article

Times cited : (36)

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