Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

Applied Physics Letters

Volumn 68, Issue 11, 1996, Pages 1543-1545

  Sun, C K ^a   Wang, G ^a   Bowers, J E ^a   Brar, B ^a   Blank, H R ^a   Kroemer, H ^a   Pilkuhn, M H ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC SPACE CHARGE; ENERGY GAP; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES;

BAND BENDING; GALLIUM ANTIMONIDE; HOLE CAPTURE PROCESS; RADIATIVE LIFETIMES; RADIATIVE RECOMBINATION; STAGGERED BAND LINEUP; TIME CORRELATED PHOTON COUNTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030103965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115693     Document Type: Article

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13. This might support the existence of type-II excitons at lower carrier density. For definition of type-II excitons in QDs, see Ref. 5. At higher carrier density, whether they still persist is questionable. The observed initial non-exponential decay does not support the existence of excitons.