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Volumn 207, Issue 10, 2010, Pages 2351-2354

Optical properties of InN grown on templates with controlled surface polarities

Author keywords

InN; Optical properties; Photoluminescence; Surface polarity

Indexed keywords

BURSTEIN-MOSS SHIFT; CRYSTAL QUALITIES; GAN/SAPPHIRE; INN; INN LAYERS; LINE SHAPE ANALYSIS; LOW TEMPERATURE PHOTOLUMINESCENCE; LOWER ENERGIES; POLAR SUBSTRATES; POLAR SURFACES; RAMAN MODES; RECIPROCAL SPACE MAPS; STRAIN-FREE; STRUCTURAL AND OPTICAL PROPERTIES; SURFACE POLARITIES; SURFACE POLARITY; XRD;

EID: 77957899384     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026086     Document Type: Article
Times cited : (7)

References (28)
  • 18
    • 33748678076 scopus 로고    scopus 로고
    • edited by Z. C. Feng, Imperial College Press, London, UK Chap. 6 ISBN 1-86094-636-4
    • N. Dietz, in: III-Nitrides Semiconductor Materials, edited by Z. C. Feng (Imperial College Press, London, UK, 2006), Chap. 6, pp. 203-235, ISBN 1-86094-636-4.
    • (2006) III-Nitrides Semiconductor Materials , pp. 203-235
    • Dietz, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.