Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Tuomisto, F ^a   Saarinen, K ^a   Lucznik, B ^b   Grzegory, I ^b   Teisseyre, H ^b   Suski, T ^b   Porowski, S ^b   Hageman, P R ^c   Likonen, J ^d  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^d VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; CRYSTALS; DIFFUSION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OXYGEN; PHYSICAL PROPERTIES; POSITRON ANNIHILATION SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMICS; VAPOR PHASE EPITAXY;

DEFECT FORMATION; GROWTH POLARITY; HIGH DISLOCATION DENSITY; VACANCY DEFECT;

CRYSTAL GROWTH;

EID: 17044424594     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854745     Document Type: Article

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