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Volumn 92, Issue 4, 2008, Pages

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; IMPURITIES; INDIUM COMPOUNDS; X RAY DIFFRACTION;

EID: 38849156485     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2840192     Document Type: Article
Times cited : (17)

References (16)
  • 8
    • 31144456876 scopus 로고    scopus 로고
    • MSBTEK 0921-5107 10.1016/j.mseb.2005.10.032.
    • V. Woods and N. Dietz, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/j.mseb.2005.10.032 127, 239 (2006).
    • (2006) Mater. Sci. Eng., B , vol.127 , pp. 239
    • Woods, V.1    Dietz, N.2
  • 9
    • 85136013717 scopus 로고    scopus 로고
    • edited by Z. C. Feng (Imperial College, London), Cha
    • N. Dietz, in III-Nitrides Semiconductor Materials, edited by, Z. C. Feng, (Imperial College, London, 2006), Chap., pp. 203-235.
    • (2006) III-nitrides Semiconductor Materials , pp. 203-235
    • Dietz, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.