Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 3, 2008, Pages 399-405

  Gherasoiu, I ^a   O'Steen, M ^a   Bird, T ^a   Gotthold, D ^a   Chandolu, A ^b   Song, D Y ^b   Xu, S X ^b   Holtz, M ^b   Nikishin, S A ^b   Schaff, W J ^c  

^a Veeco Instruments Inc   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; STEP-FLOW FEATURES;

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; RAMAN SCATTERING; SURFACE ROUGHNESS;

INDIUM COMPOUNDS;

EID: 42949154333     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2899412     Document Type: Article

References (39)