On the photoresist stripping and damage of ultralow k dielectric materials using remote H2 - And D2 -based discharges

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 5, 2007, Pages 1593-1602

  Stueber, Guido J ^a   Oehrlein, Gottlieb S ^a   Lazzeri, P ^b   Bersani, M ^b   Anderle, M ^b   Busch, Eric ^c   McGowan, Richard ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b ITC IRST   (Italy)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ETCHING; FILM THICKNESS; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; POROSITY; SECONDARY ION MASS SPECTROMETRY;

ATOMIC HYDROGEN; KINETIC ISOTOPE EFFECT; NUCLEAR VIBRATIONS; PROCESSING TEMPERATURE;

DIELECTRIC MATERIALS;

EID: 34648815812     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2769360     Document Type: Article

References (32)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (2005).
2. S. K. Ajmera, P. D. Matz, J. Kim, P. B. Smith, S. Grunow, S. S. Papa Rao, C. Jin, and T. Q. Hurd, Future Fab International 10, 103 (2004).
3. T. M. Shaw, D. Jimerson, D. Haders, C. E. Murray, A. Grill, D. C. Edelstein, and D. Chidambarrao, Advanced Metallization Conference 2003 (Materials Research Society, Pittsburg, 2004), p. 77.
4. Y. Wang, R. Kumar, X. Zhou, J. Pan, and J. Chai, Thin Solid Films 473, 132 (2005).
5. X. Hua, J. Vac. Sci. Technol. A 23, 151 (2005).
6. Y.-H. Kim, S.-K. Lee, and H. J. Kin, J. Vac. Sci. Technol. A 18, 1216 (2000).
7. X. Hua, J. Vac. Sci. Technol. B 24, 1238 (2006).
8. D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, and K. Maerx, J. Vac. Sci. Technol. B 20, 1923 (2002).
9. X. Hua, G. S. Oehrlein, P. Lazzeri, M. Anderle, C. K. Inoki, T. S. Kuan, P. Jiang, and Wen-li Wu, Future Fab International 19, 86 (2005).
10. E. Kondoh, T. Asano, A. Nakashima, and M. Komatu, J. Vac. Sci. Technol. B 18, 1276 (2000).
11. E. Busch, B. White, R. McGowan, S. Hosali, and S. Satyanarayana, Future Fab International 20, 101 (2006).
12. A. Natsushita, IEEE International Interconnect Technology Conference, 2003 (unpublished).
13. P. Lazzeri, M. Bersani, M. Anderle, G. J. Stueber, G. S. Oehrlein, E. Busch, and R. McGowan, J. Vac. Sci. Technol. B 24, 2695 (2006).
14. A. Grill and V. Patel, J. Electrochem. Soc. 151, F133 (2004).
15. H. Cui, R. J. Carter, D. L. Moore, H. Peng, D. W. Gidley, and P. A. Burke, J. Appl. Phys. 97, 113302 (2005).
16. A. Matsushita, Proceedings of the IEEE International Interconnect Technology Conference, 2003 (unpublished), pp. 147-149.
17. X. Hua, X. Wang, D. Fuentevilla, G. S. Oehrlein, F. G. Celii, and K. H. R. Kirmse, J. Vac. Sci. Technol. A 21, 1708 (2003).
18. X. Hua, J. Vac. Sci. Technol. B 24, 1238 (2006).
19. L. Zheng, L. Ling, X. Hua, G. S. Oehrlein, and E. A. Hudson, J. Vac. Sci. Technol. A 23, 634 (2005).
20. M. Nastasi, J. Mayer, and J. Hirvonen, Ion-Solid Interaction: Fundamentals And Applications (Cambridge University Press, Cambridge, 1996).
21. P. Lazzeri, X. Hua, G. S. Oehrlein, M. Barrozi, E. Iacob, and M. Anderle, J. Vac. Sci. Technol. B 23, 1491 (2005).
22. H. J. Lee, C. L. Soles, D. W. Liu, B. J. Bauer, E. K. Lin, W. L. Wu, and A. Grill, J. Appl. Phys. 95, 2355 (2004).
23. W. L. Wu, W. E. Wallace, E. K. Lin, G. W. Lynn, C. J. Glinka, E. T. Ryan, and H.-M. Ho, J. Appl. Phys. 87, 1193 (2000).
24. H. Park and C. R. Helms, J. Electrochem. Soc. 139, 2042 (1992).
25. H. Nagai, S. Takashima, M. Hiramatsu, M. Hori, and T. Goto, J. Appl. Phys. 91, 2615 (2002).
26. K. Kurihara, K. Karahashi, A. Egami, and M. Nakamura, J. Vac. Sci. Technol. A 24, 2217 (2006).
27. G. J. Kluth, M. M. Sung, and R. Maboudian, Langmuir 13, 6491 (1997).
28. K. Harada, J. Electrochem. Soc. 127, 491 (1980).
29. K. Harada, J. Appl. Polym. Sci. 26, 1961 (1981).
30. K. B. Wiberg, Chem. Rev. (Washington, D.C.) 55, 713 (1955).
31. F. H. Westheimer, Chem. Rev. (Washington, D.C.) 61, 265 (1961).
32. S. Scheiner, Biochim. Biophys. Acta 1458, 28 (2000).