Removal of plasma-modified low-k layer using dilute HF: Influence of concentration

Electrochemical and Solid-State Letters

Volumn 8, Issue 7, 2005, Pages

  Le, Quoc Toan ^a   Baklanov, M R ^a   Kesters, E ^a   Azioune, A ^b   Struyf, H ^a   Boullart, W ^a   Pireaux, J J ^b   Vanhaelemeersch, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF NAMUR   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; ELECTROCHEMISTRY; ELLIPSOMETRY; FLUORINE COMPOUNDS; PERMITTIVITY; PLASMAS; POROSIMETERS; THICK FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DENSE SURFACE LAYER; ELLIPSOMETRY MEASUREMENTS; PLASMA TREATMENT; SEALING LAYERS;

SURFACE TREATMENT;

EID: 23244443926     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1928234     Document Type: Article

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