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Volumn , Issue , 2009, Pages 134-136

Evaluation of plasma damage in blanket and patterned low-k structures by near-field scanning probe microwave microscope: Effect of plasma ash chemistry

Author keywords

[No Author keywords available]

Indexed keywords

ASH CHEMISTRY; DIELECTRIC CONSTANTS; ELEVATED TEMPERATURE; ELLIPSOMETRIC POROSIMETRY; FTIR; METALLIZATIONS; MICROWAVE MICROSCOPES; NEAR-FIELD SCANNING; PATTERNED STRUCTURE; PLASMA ASH; PLASMA DAMAGE; ROOM TEMPERATURE; SIDEWALL DAMAGE; WATER SOURCE;

EID: 70349463103     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090363     Document Type: Conference Paper
Times cited : (2)

References (12)
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  • 7
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    • Quantification of processing damage in porous low dielectric constant films
    • Nov-Dec
    • M.R. Baklanov, K.P. Mogilnikov, and Q.T. Le, "Quantification of processing damage in porous low dielectric constant films," Microelectronic Engineering, vol. 83, pp. 2287-2291, Nov-Dec 2006.
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  • 9
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    • Nov 10
    • H. Shi, J. Bao, R.S. Smith, H. Huang, J. Liu, P.S. Ho, et al., "Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics," Appl. Phys. Lett., vol. 93, pp. 192909, Nov 10 2008.
    • (2008) Appl. Phys. Lett , vol.93 , pp. 192909
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.