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2
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Plasma induced low-k modification and its impact on reliability
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August
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Z. Tokei, M. Baklanov, I. Ciofi, L. Younglong, and A. Urbanowicz, "Plasma induced low-k modification and its impact on reliability," Semiconductor Fabtech, pp. 110-115, August 2007.
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Tokei, Z.1
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Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe
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Talanov, V.V.1
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Effects of bias, pressure and temperature in plasma damage of ultra low-k films
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M. Urbanowicz, A. Humbert, G. Mannaert, Z. Tokei, and M. Baklanov, "Effects of bias, pressure and temperature in plasma damage of ultra low-k films", Sol. State Phenomena, vol. 134, pp. 317-320, 2008.
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Use of plasma assisted sublimation to remove photoresist from porous low-k dielectrics
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Quantification of processing damage in porous low dielectric constant films
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M.R. Baklanov, K.P. Mogilnikov, and Q.T. Le, "Quantification of processing damage in porous low dielectric constant films," Microelectronic Engineering, vol. 83, pp. 2287-2291, Nov-Dec 2006.
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Baklanov, M.R.1
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H. Shi, J. Bao, R.S. Smith, H. Huang, J. Liu, P.S. Ho, et al., "Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics," Appl. Phys. Lett., vol. 93, pp. 192909, Nov 10 2008.
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Non-destructive electrical characterization of low-k sidewall damage prior to metallization by a near-field scanned microwave probe
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June 5-7, San Francisco, CA, USA
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A.R. Schwartz, V.V. Talanov, A. Scherz, B. Kastenmeier, B. White, and S. Satyanarayana, "Non-destructive electrical characterization of low-k sidewall damage prior to metallization by a near-field scanned microwave probe", 2006 IEEE International Interconnect Technology Conference, June 5-7, 2006, San Francisco, CA, USA.
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Schwartz, A.R.1
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Scherz, A.3
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White, B.5
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2 plasma for resist removal", 25th Advanced Metallization Conference, San Diego, CA, 2008.
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25th Advanced Metallization Conference
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Urbanowicz, A.M.1
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Verdonck, P.6
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