Low interface state density AlN/GaN MISFETs

Electronics Letters

Volumn 35, Issue 24, 1999, Pages 2145-2146

  Alekseev, E ^a   Eisenbach, A ^a   Pavlidis, D ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

STATE DENSITY; TERMAN METHOD;

MISFET DEVICES;

EID: 0033221741     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991407     Document Type: Article

References (7)

1. SHEPPARD, T.S.: 'High power microwave GaN/A1GaN HEMTs on semi-insulating silicon carbide substrates', IEEE Electron Device Lett., 1999, 20, (4), pp. 161-163
2. EASTMAN, L.: 'GaN materials for high power microwave amplifiers', Proc. MRS Spring Meeting, 13-15 April 1998, pp. 3-7
3. 0.5N/GaN MODFETs with power density > 3W/mm at 18GHz', Electron. Lett., 1997, 33, (20). pp. 1742-1743
4. SAUNIER, P., NGUYEN, R., MESSICK, L.J., and KHATIBZDEH, M.A.: 'An InP MISFET with a power density of 1.8W/mm at 30GHz', IEEE Electron Device Lett., 1990, 11, (1), pp. 48-49
5. ALEKSEEV, E., EISENBACH, A., and PAVLIDIS, D.: 'MOCVD grown AIN/GaN HFETs', 23rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '99), Chantilly, France, 26-28 May 1999
6. EISENBACH, A., ALEKSEEV, E., and PAVLIDIS, D.: 'Growth and characterization of AIN/GaN HFETs', Ninth Biennial Organometallic Vapor Phase Epitaxy Workshop, Ponte Vedra Beach, Florida, 23-27 May 1999
7. BINARI, S.C., DOVERSPIKE, K., KELNER, G., DIETRICH, H.B., and WICKENDEN, A.E.: 'GaN FETs for microwave and high-temperature applications', Solid-State Electron., 1997, 41, (2), pp. 177-180