Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies

Journal of Ceramic Processing Research

Volumn 9, Issue 2, 2008, Pages 155-157

  Kim, Hong Yeol ^a   Ahn, Jaehui ^c   Kim, Jihyun ^a   Yun, Sang Pil ^b   Lee, Jae Sang ^c  

^a Korea University   (South Korea)

^b Korea Atomic Energy Research Institute   (South Korea)

^c NONE

Author keywords

Gallium nitride; High electron mobility transistor; Irradiation; Proton

Indexed keywords

EID: 44649183883     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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