Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton Fluence

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1934-1941

  White, B D ^a   Bataiev, M ^b   Goss, S H ^a   Hu, X ^c   Karmarkar, A ^c   Fleetwood, D M ^c   Schrimpf, R D ^c   Schaff, W J ^d   Brillson, L J ^a  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d School of Chemical and Molecular Engineering   (United States)

Author keywords

AlGaN; Cathodoluminescence (CL) spectroscopy; GaN; Heterostructure field effect transistor (HFET); High electron mobility transistor (HEMT); Irradiation; Modulation doped FET (MODFET); Nitride; Ohmic contact; Proton; Schottky barrier

Indexed keywords

ALUMINUM COMPOUNDS; CATHODOLUMINESCENCE; DEGRADATION; GALLIUM NITRIDE; HETEROJUNCTIONS; OHMIC CONTACTS; PROTON IRRADIATION; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY;

ALGAN; CATHODOLUMINESCENCE (CL) SPECTROSCOPY; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); MODULATION-DOPED FET (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1242288190     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821827     Document Type: Conference Paper

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