Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol

Materials Letters

Volumn 53, Issue 1-2, 2002, Pages 126-131

  Sallet, V ^a   Thiandoume, C ^a   Rommeluere, J F ^a   Lusson, A ^a   Riviere A ^a   Riviere J P ^a   Gorochov, O ^a   Triboulet, R ^a   Muoz Sanjose V ^b  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITY OF VALENCIA   (Spain)

Author keywords

Epitaxial layers; II VI compounds; MOCVD; Tertiarybutanol; ZnO

Indexed keywords

CRYSTAL ORIENTATION; HEAT TREATMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SAPPHIRE SUBSTRATES;

ZINC OXIDE;

EID: 0036497887     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00558-4     Document Type: Article

References (14)