Study of the integrated growth of dielectric films on GaN semiconductor substrates

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 57, Issue 10, 2010, Pages 2192-2197

  Li, Yanrong ^a   Zhu, Jun ^a   Luo, Wenbo ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PROPERTIES; EPITAXIALLY GROWN; EX SITU; IN-SITU; MGO BUFFER LAYER; MGO-BUFFER; ORIENTED FILMS; PEROVSKITE FILMS; PEROVSKITE OXIDES; PZT; PZT FILM; REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTIONS; SEMICONDUCTOR SUBSTRATE; SRTIO; TIO;

BUFFER LAYERS; DIELECTRIC FILMS; DIFFRACTION; ELECTRIC PROPERTIES; GALLIUM NITRIDE; PEROVSKITE; PULSED LASER DEPOSITION; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 77957698332     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2010.1677     Document Type: Conference Paper

References (30)

1. 3 on Si (001) using MgO/STO buffer layers by molecular beam epitaxy," J. Cryst. Growth, vol. 294, pp. 401-406, Sep. 2006.
2. 3 films in a rotating disk vertical MOCVD reactor," J. Vac. Sci. Technol. B, vol. 23, pp. 1674-1678, Jul. 2005.
3. S. J. Pearton and F. Ren, "GaN electronics," Adv. Mater., vol. 12, pp. 1571-1580, Nov. 2000.
4. G. Koley and M. G. Spencer, "On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface," Appl. Phys. Lett., vol. 86, art. no. 042107, Jan. 2005.
5. 3 thin films," in IEEE MTT-S Int. Microwave Symp. Dig., 2004, pp. 1509-1512.
6. A. Victor, J. Nath, D. Ghosh, S. Aygun, W. Nagy, J.-P. Maria, A. Kingon, and M. B. Steer, "Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning," in Proc. 36th European Microwave Conf., 2006, pp. 87-90.
7. J. F. Scott and C. A. Paz de Araujo, "Ferroelectric memories," Science, vol. 246, pp. 1400-1405, Dec. 1989.
8. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, "Fatigue-free ferroelectric capacitors with platinum electrodes," Nature, vol. 374, pp. 627-629, Apr. 1995.
9. Y.-S. Kanga, B. Xiao, Ya. I. Alivov, Q. Fan, J. Xie, and H. Morkoç, "Ferroelectric PZT/AlGaN/GaN field effect transistors," in Proc. SPIE, Mar. 2006, vol. 6121, art. no. 61210S.
10. Y.-S. Kang, Q. Fan, B. Xiao, Ya. I. Alivov, J. Xie, N. Onojima, S.-J. Cho, Y.-T. Moon, H. Lee, D. Johnstone, H. Morkoç, and Y.-S. Park, "Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN/GaN field effect transistor," Appl. Phys. Lett., vol. 88, art. no. 123508, Mar. 2006.
11. I. Stolichnov, L. Malin, P. Murait, and N. Setter, "Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures," Appl. Phys. Lett., vol. 88, art. no. 043512, Jan. 2006.
12. W. A. Doolittle, G. Namkoong, A. G. Carver, and A. S. Brown, "Challenges and potential payoff for crystalline oxides in wide band-gap semiconductor technology," Solid-State Electron., vol. 47, pp. 2143-2147, Dec. 2003.
13. F. Wang, P. Vakhutinsky, P. Norris, V. Fuflyigin, and A. Osinsky, "Growth of ferroelectric oxide films on n-GaN/c-sapphire structures," Appl. Phys. Lett., vol. 76, pp. 1612-1614, Mar. 2000.
14. 3 electrode," Jpn. J. Appl. Phys., vol. 43, pp. L1425-L1428, Oct. 2004.
15. 3 films on GaN/ sapphire," Thin Solid Films, vol. 484, pp. 154-159, Jul. 2005.
16. 3/MgO/GaN/GaAs structure for optoelectronic device applications," J. Cryst. Growth, vol. 190, pp. 227-230, Jun. 1998.
17. H. S. Craft, J. F. Ihlefeld, M. D. Losego, R. Collazo, Z. Sitar, and J.-P. Maria, "MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy," Appl. Phys. Lett., vol. 88, art. no. 212906, May. 2006.
18. 2 on GaN(0001) by pulsed laser deposition," Jap. J. Appl. Phys., vol. 44, pp. L1503-L1505, Dec. 2005.
19. T. L. Goodrich, W. Cai, D. Losego, J.-P. Maria, L. Fitting Kourkoutis, D. A. Muller, and K. S. Ziemer, "Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide," J. Vac. Sci. Technol. B, vol. 26, pp. 1110-1114, May 2006.
20. 3 with (0001) GaN," Appl. Phys. Lett., vol. 90, art. no. 172908, Apr. 2007.
21. 2 buffer layer," J. Appl. Phys., vol. 105, art. no. 104102, May 2009.
22. 2 layer on hexagonal GaN," J. Appl. Phys., vol. 106, art. no. 104120, Nov. 2009.
23. 3/Pt hybrid electrodes," Ferroelectrics, to be published.
24. K. Yoo and B. D. Seshu, "Fatigue modeling of lead zirconate titanate thin films," Mater. Sci. Eng. B, vol. 13, pp. 319-322, Apr. 1992.
25. 3 thin films by metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 32, pp. 4082-4085, Jul. 1993.
26. M. Takahashi, "Space charge effect in lead zirconate titanate ceramics caused by the addition of impurities," Jpn. J. Appl. Phys., vol. 9, pp. 1236-1246, Apr. 1970.
27. W. L. Warren, B. A. Tuttle, and D. Dimos, "Ferroelectric fatigue in perovskite oxides," Appl. Phys. Lett., vol. 67, pp. 1426-1428, Sep. 1995.
28. B. A. Boukamp, B. A. van Hassel, I. C. Vinke, K. J. De Vries, and A. J. Burggraaf, "The oxygen transfer process on solid oxide/ noble metal electrodes, studied with impedance spectroscopy, dc polarization and isotope exchange," Electrochim. Acta, vol. 38, pp. 1817-1825, Oct. 1993.
29. 3/Pt hybrid electrodes," Ferroelectrics. to be published.
30. 2) electrodes for nonvolatile memory applications," J. Appl. Phys., vol. 77, pp. 2146-2154, Mar. 1995.