Integration of (208) oriented epitaxial Hf-doped Bi4Ti 3O12 with (0002) GaN using SrTiO3/TiO 2 buffer layer

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Luo, W B ^a   Zhu, J ^a   Li, Y R ^a   Wang, X P ^a   Zhang, Y ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL MEASUREMENT; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; EPITAXIALLY GROWN; EX SITU; FATIGUE ENDURANCES; GAN TEMPLATE; HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; IN-PLANE; IN-SITU; LASER MOLECULAR BEAM EPITAXY; LOW-LEAKAGE CURRENT; REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTIONS; REMNANT POLARIZATIONS; SRTIO; STRUCTURAL CHARACTERISTICS; SWITCHING CYCLES; TIO; XRD SPECTRA;

BUFFER LAYERS; CRYSTAL GROWTH; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HAFNIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OXIDE MINERALS; PHOTODEGRADATION; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; STRONTIUM ALLOYS; TITANIUM OXIDES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC FILMS;

EID: 66549084462     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126717     Document Type: Article

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