Heteroepitaxial growth of rutile TiO2 on GaN(0001) by pulsed laser deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 50-52, 2005, Pages

  Hitosugi, Taro ^a,b   Hirose, Yasushi ^b   Kasai, Junpei ^b   Furubayashi, Yutaka ^b   Ohtani, Makoto ^b   Nakajima, Kiyomi ^c   Chikyow, Toyohiro ^c   Shimada, Toshihiro ^a,b   Hasegawa, Tetsuya ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Epitaxial; Gallium nitride; GaN; Heteroepitaxial; PLD; Pulsed laser deposition; Thin film; TiO2

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; PULSED LASER DEPOSITION; TITANIUM DIOXIDE;

EPITAXIAL; HETEROEPITAXIAL; LAYER-BY-LAYER GROWTH; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED);

THIN FILMS;

EID: 31844440099     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1503     Document Type: Article

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