Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning

Proceedings of the 36th European Microwave Conference, EuMC 2006

Volumn , Issue , 2006, Pages 87-90

  Victor, Alan ^a,b   Nath, Jayesh ^a   Ghosh, Dipankar ^b   Aygun, Seymen ^b   Nagy, Walter ^c   Maria, Jon Paul ^b   Kingon, Angus I ^b   Steer, Michael B ^b  

^a Harris Corporation ^*  (United States)

^b North Carolina State University   (United States)

^c NITRONEX CORPORATION   (United States)

Author keywords

AlGaN GaN; BST; Ferroelectric films; Gallium nitride; GaN; GaN on Si; HFET; Master oscillator; Power oscillators; Strontium titanate; Varactor; VCO; Voltage controlled oscillator

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; THIN FILMS; VOLTAGE CONTROL;

FERROELECTRIC VARACTOR TUNING; HFET POWER OSCILLATORS;

OSCILLATORS (ELECTRONIC);

EID: 41649112312     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2006.281206     Document Type: Conference Paper

References (14)

1. J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, V. Steel, P. Garber, P. Wilkerson, B. Zaroff, J. Dick, T. Mercier, J. Bonaker, M. Hamilton, C. Greer, M. Isenhour, "Gallium Gallium nitride (GaN) HEMT's: progress and potential for commercial applications," Gallium Arsenide Integrated Circuit (GaAs IC) Symp. Dig., Oct. 2002. pp. 243-246.
2. W. Nagy, J. Brown., R. Borges, and S. Singhal, "Linearity characteristics of microwave power GaN HEMTs.," IEEE Trans. Microw. Theory Techn., vol. 51, no. 2, pp. 660-664, Feb. 2003
3. W. Nagy, S. Singhal, R. Borges, J. W. Johnson, J. D. Brown, R. Therrien, A. Chaudhari, A. W. Hanson, J. Riddle, S. Booth, P. Rajagopal, E. L. Piner, and K. L. Linthicum, "150W GaN-on-Si RF power transistor," in 2005 IEEE MTT-S International Microwave Symposium. Digest., Jun. 2005.
4. 3 thin films," in 2004 IEEE MTT-S Int. Microwave Symposium. Digest., vol. 3, Jun. 2004, pp. 1509-1512.
5. P. Rice, M. Moore, A. R. Barnes, M. J. Uren, N. Malbert, N. Labat, and R. Sloan, "A 10 GHz dielectric resonator oscillator using GaN technology," in 2004 IEEE MTT-S International Microwave Symposium. Digest., vol. 3. Jun. 2004, pp. 1497-1500.
6. C. Sanabria, X. Hongtao, S. Heikman, U. K. Mishra, and R. A. York, "A GaN differential oscillator with improved harmonic performance," Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 463-465, Jul. 2005.
7. J. B. Shealy. J. A. Smart, and J. R. Shealy, "Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)," IEEE Microwave Wireless Components Letters., , vol. 11, no. 6, pp. 244-245, Jun. 2001.
8. V. S. Kaper, V. Tilak, H. Kim. A. V. Vertiatchikh, R. M. Thompson, T. R. Prunty, L. F. Eastman, and J. R. Shealy, "High-power monolithic AlGaN/GaN HEMT oscillator, " IEEE Jur. Solid-State Circuits, vol. 38, no. 9, pp. 1457-1461, Sep. 2003.
9. V. S. Kaper, R. M. Thompson, T. R. Prunty, and J. R. Shealy, "Signal generation, control and frequency conversion AlGaN/GaN HEMT MMICs," IEEE Trans. Microw. Theory Techn., vol. 53, no. 1, pp. 55-65, Jan. 2005.
10. A. Podcameni, L. Bermudez, "Large signal design of GaAs FET oscillators using input dielectric resonators," IEEE Trans. Microw. Theory Techn., vol. 31, no. 4, pp. 358-361, Apr. 1983.
11. A. Victor, J. Nath, D. Ghosh, B. Boyette, J.-P. Maria, M. B. Steer, A. I. Kingon, and G. T. Stauf, "A voltage controlled oscillator using Barium Strontium Titanate (BST) thin film varactor," 2004 IEEE Proc. Radio and Wireless Conf., Atlanta, Georgia, Sep. 2004, pp. 91-94.
12. A. Victor, J. Nath, D. Ghosh, B. Boyette, J.-P. Maria, M. B. Steer, A. I. Kingon, and G. T. Stauf, "Noise characteristics of an oscillator with a barium strontium titanate (BST) varactor." IEE Proc. Microwaves, Antennas & Propagation, pp. 96-102, Feb. 2006.
13. 3 capacitors fabricated on low-cost substrates with copper metallization," Thin Solid Films vol. 496, No. 2. pp. 669-673, Feb. 2006.
14. J. Nath, "Design and characterization of frequency agile RF and Microwave Devices using Ferroelectrics," Ph.D. Dissertation, North Carolina State Univ., Raleigh, NC. USA. Mar. 2006.