Ferroelectric PZT/AlGaN/GaN field effect transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6121, Issue , 2006, Pages

  Kang, Youn Seon ^b   Xiao, Bo ^a   Alivov, Ya I ^a   Fan, Qian ^a   Xie, Jinqiao ^a   Morkoç, Hadis ^a  

^a Virginia Commonwealth University   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

AlGaN; Ferroelectric field effect transistor; Hysteresis; PZT

Indexed keywords

ALGAN; FERROELECTRIC FIELD EFFECT TRANSISTORS; PZT;

ALUMINUM COMPOUNDS; FERROELECTRICITY; GALLIUM NITRIDE; HYSTERESIS; MAGNETRON SPUTTERING; PIEZOELECTRIC MATERIALS;

FIELD EFFECT TRANSISTORS;

EID: 33646679422     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657584     Document Type: Conference Paper

References (33)

1. D. H. Looney, U.S. Patent No. 2791758 (1957);
2. W. L. Brown, U.S. Patent No. 2791759 (1957);
3. I. M. Ross, U.S. Patent No. 2791760 (1957);
4. J. A. Morton, U.S. Patent No. 2791761 (1957).
5. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices EB-10, 338 (1963).
6. R. Zuleeg and H. H. Wieder, Solid-State Electron. 9, 657 (1966).
7. S. Y. Wu, IEEE Trans. Electron Devices ED-21, 499 (1974);
8. Ferroelectrics 11, 379 (1976)
9. T. Nakamura, Y. Nakao, A. Kamisawa, H. Takasu, IEEE ISSCC95, 69 (1995)
10. - Yukio Watanabe, Appl. Phys. Lett. 66, 1770 (1995)
11. I. A. Veselovskii, I. B. Grekhov, L. A. Delimova, I. A. Liniichuk, Technical Physics Letters, 27, 39 (2001)
12. M. W. J. Prins, K.-O. Grosse-Holz, G. Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf, Appl. Phys. Lett. 68, 3650 (1996)
13. M. W. J. Prins, S. E. Zinnerners, J. F. M. Cillessen, and J. B. Giesbers, Appl. Phys. Lett. 70, 458 (1997)
14. I.E. Titkov, LP. Pronin, D.V. Mashovets, L.A. Delimova. I.A. Liniichuk, I.V. Grekhov, Semiconductors, 39, 390 (2005)
15. J.F. Scott and F. A. Paz De Araujo, Science, Vol. 246, pp. 1400-1405, December 15, 1989.
16. Stephen C. Philpy, David A. Kamp, Alan D. DeVilbiss, Alan F. Isaacson and Gary F. Derbenwick, 2000 IEEE Aerospace Conference Proceedings, catalogue # 00TH8484, IEEE Part, Vol. 5, pp. 377-383, 2000
17. Fujitsu Semiconductor memory manual, FRAM guide book, MN05-00009-4E, the 4th edition May 2005
18. J.-P. Han and T. P. Ma, Appl. Phys. Lett. 72, 1185 (1998).
19. S.-M. Koo, S. Khartsev, C.-M. Zetterling, A. Grishin, and M. Ostling, Appl. Phys. Lett. 83, 3975 (2003).
20. R. Ramesh, S. Aggarwal, and O. Auciello, Mater. Sci. Eng. 32, 191 (2001).
21. S.-M. Koo, S. Khartsev, C.-M. Zetterling, A. Grishin, and M. Ostling, Appl. Phys. Lett. 81, 895 (2002).
22. H. Morkoç "Nitride Semiconductors and Devices", Springer 1999; second edition in press.
23. Youn-Seon Kang, Qian Fan, Bo Xiao,Ya. I. Alivov, Jinqiao Xie, Norio Onojima, Sang-Jun Cho, Yong-Tae Moon, Hosun Lee, D. Johnstone, and Hadis Morkoç, Appl. Phys. Lett., in press.
24. L. He, M. A. Reshchikov, F. Yun, D. Huang, T. King, and H. Morkoç, Appl. Phys. Lett. 81, 2178 (2002).
25. Y. Fu, Y. T. Moon, F. Yun, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, Appl. Phys. Lett. 86, 43108 (2005).
26. L. H. Robins, J. Lowney, and D. K. Wickenden, J. Mater. Research, 13, 2480 (1998).
27. th International Symposium on Applications of Ferroelectrics, 707 (1990).
28. J. -P. Han, S. -M. Koo, C. A. Richter, and E. M. Vogel, Appl. Phys. Lett. 85, 1439 (2004).
29. H. Morkoç, H. Unlu, and G. Ji, "Principles and technology of MODFET", vol. 2, John Wiley & Sons, p. 354 (1991)
30. C. L. Sun, S. Y. Chen, C. C. Liao, and A. Chin, Appl. Phys. Lett. 85, 4726 (2004).
31. H. J. Jung and T. S. Kim, J. Appl. Phys. 79, 12 (1996).
32. D. Campi and C. Coriasso, J. Appl. Phys. 64, 4128 (1988)
33. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys., 76, 1363 (1994)