Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1110-1114

  Goodrich, T L ^a   Cai, Z ^a   Losego, M D ^b   Maria, J P ^b   Fitting Kourkoutis, L ^c   Muller, D A ^c   Ziemer, K S ^a  

^a Northeastern University   (United States)

^b North Carolina State University   (United States)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTIONAL OXIDES; HEXAGONAL SILICON CARBIDE; SINGLE CRYSTALLINE MAGNESIUM OXIDE; TWINNED STRUCTURE;

CRYSTALLINE MATERIALS; MAGNESIA; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SINGLE CRYSTALS;

BARIUM COMPOUNDS;

EID: 44649179183     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2889389     Document Type: Article

References (23)

1. W. A. Doolittle, A. G. Carver, and W. Henderson, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1926294 23, 1272 (2005).
2. A. R. Meier, F. Niu, and B. W. Wessels, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2006.06.026 294, 401 (2006).
3. A. M. Dhote, A. L. Meier, D. J. Towner, B. W. Wessels, J. Ni, and T. J. Marks, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1993621 23, 1674 (2005).
4. D. M. Gill, C. W. Conrad, G. Ford, B. W. Wessels, and S. T. Ho, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119397 71, 1783 (1997).
5. D. L. Kaiser, M. D. Vaudin, L. D. Rotter, Z. L. Wang, J. P. Cline, C. S. Hwang, R. B. Marinenko, and J. G. Gillen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.113480 66, 2801 (1995).
6. N. A. Frey, R. Heindl, S. Srinath, H. Srikanth, and N. J. Dudney, Mater. Res. Bull. MRBUAC 0025-5408 10.1016/j.materresbull.2005.04.006 40, 1286 (2005).
7. S. Srinath, N. A. Frey, R. Heindl, H. Srikanth, K. R. Coffey, and N. J. Dudney, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1853874 97, 10J115 (2005).
8. R. Heindl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2750519 90, 252507 (2007).
9. E. O. Johnson, RCA Rev. RCARCI 0033-6831 26, 163 (1965).
10. R. Borges, RF Design, Sept. 2001, p. 72.
11. X. Y. Chen, J. Wang, K. H. Wong, C. L. Mak, G. X. Chen, J. M. Liu, M. Wang, and Z. G. Liu, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-004-3068-1 81, 1145 (2005).
12. K.-T. Kim, J.-M. Lee, S.-H. Song, and C.-I. Kim, Thin Solid Films THSFAP 0040-6090 475, 166 (2005).
13. T. L. Goodrich, Z. Cai, M. D. Losego, J.-P. Maria, and K. S. Ziemer, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2734979 25, 1033 (2007).
14. T. L. Goodrich, Z. Cai, and K. S. Ziemer, Appl. Surf. Sci. ASUSEE 0169-4332 (in press).
15. T. Kimura, T. Goto, H. Shintanl, K. Ishlzaka, T. Arima, and Y. Tokura, Nature (London) NATUAS 0028-0836 10.1038/nature02018 426, 55 (2003).
16. N. Hur, S. Park, P. A. Sharma, J. S. Ahn, S. Guha, and S. W. Cheong, Nature (London) NATUAS 0028-0836 10.1038/nature02572 429, 392 (2004).
17. V. Ramachandran, M. F. Brady, A. R. Smith, R. M. Feenstra, and D. W. Greve, J. Electron. Mater. JECMA5 0361-5235 10.1007/s11664-998-0406-7 27, 308 (1996).
18. T. Goodrich, J. Parisi, J. Leong, and K. S. Ziemer, AIChE Conference Proceedings, 2005 (unpublished), 135e/1.
19. T. L. Goodrich, J. Parisi, Z. Cai, and K. S. Ziemer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2436636 90, 042910 (2007).
20. C. D. Theis and D. G. Schlom, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.580185 14, 2677 (1996).
21. NIST Database 82, U.S. Department of Commerce, 2001.
22. A. Ichimiya and P. I. Cohen, Reflection High Energy Electron Diffraction (Cambridge University Press, Cambridge, 2004).
23. J.-J. Chen, B. P. Gila, M. Hlad, A. Gerger, F. Ren, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2170140 88, 042113 (2006).