Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba xSr1-xTiO3 thin films

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2004, Pages 1509-1512

  Xu, Hongtao ^a   Sanabria, Christopher ^a   Pervez, Nadia K ^a   Keller, Stacia ^a   Mishra, Umesh K ^a   York, Robert A ^a  

^a University of California   (United States)

Author keywords

BaSrTio3 (BST); GaN; High electron mobility transistor (HEMT); Monolithic microwave integrated circuit (MMIC); Oscillator; Phase noise

Indexed keywords

BARIUM TITANATE; CAPACITORS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; MICROWAVE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

BASRTIO3 (BST); HIGH ELECTRON-MOBILITY TRANSISTORS (HEMT); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMIC); PHASE NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4544256293     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. J. B. Shealy, J. A. Smart and J. R. Shealy, "Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)," IEEE Microwave and Wireless Components Lett., vol. 11, no. 6, pp. 244-245, June 2001.
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5. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "Growth of Fe-doped semi-insulating GaN by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 81, pp. 439-441, July 2002.