SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 6, 2009, Pages

Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high- k metal-oxide-semiconductor field-effective transistor

(6) Wang, Wenwu a,c Akiyama, Koji a,d Mizubayashi, Wataru a Nabatame, Toshihide a,e Ota, Hiroyuki a Toriumi, Akira a,b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b UNIVERSITY OF TOKYO (Japan)

c INSTITUTE OF MICROELECTRONICS (China)

d TOKYO ELECTRON LTD (Japan)

e SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTICS; EQUIVALENT-OXIDE THICKNESS; FIXED CHARGES; FLAT-BAND VOLTAGE SHIFTS; FLAT-BAND VOLTAGES; GATE MATERIALS; GATE STACKS; HIGH - K DIELECTRICS; HIGH-K GATE STACKS; INTERFACIAL LAYERS; METAL-GATE ELECTRODES; METAL-OXIDE SEMICONDUCTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NEGATIVE VOLTAGES; P TYPES; P-MOSFETS; POSITIVE SHIFTS;

DIELECTRIC DEVICES; DIFFUSION; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE MOBILITY; LOGIC GATES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON OXIDES;

ALUMINUM;

EID: 63749127158 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3093892 Document Type: Article

Times cited : (20)

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