Kelvin probe study of dipole formation and annihilation at the HfO 2/Si Interface

Applied Physics Express

Volumn 3, Issue 5, 2010, Pages

  Miyata, Noriyuki ^a   Yasuda, Tetsuji ^a   Abe, Yasuhiro ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIPOLE STRENGTHS; INTERFACE DIPOLE; KELVIN PROBE; KELVIN PROBE METHOD; NEGATIVE VOLTAGE; POTENTIAL DIFFERENCE; ULTRAHIGH VACUUM ANNEALING;

HAFNIUM COMPOUNDS; PROBES; VACUUM;

SILICON;

EID: 77952759300     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.054101     Document Type: Article

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