What is the essence of vFB shifts in high-k gate stack?

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 543-555

  Nabatame, Toshihide ^a   Iwamoto, Kunihiko ^a   Akiyama, Koji ^a   Nunoshige, Yu ^a,b   Ota, Hiroyuki ^a   Ohishi, Tomoji ^b   Toriumi, Akira ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM ALLOYS; ALUMINUM OXIDE; BINARY ALLOYS; DIELECTRIC MATERIALS; HAFNIUM ALLOYS; HAFNIUM OXIDES; LOGIC GATES; LOW-K DIELECTRIC; RUTHENIUM ALLOYS; SILICA; SILICON;

BI-LAYER; HIGH- K; HIGH-K GATE STACKS; INTERFACE DIPOLE; RE-OXIDATION; REACTION LAYERS; VFB SHIFT;

HIGH-K DIELECTRIC;

EID: 45049086764     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779589     Document Type: Conference Paper

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